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Conductive and insulating samples have been processed, with thicknesses respectively above and below the commonly admitted conductivity threshold.The intermixing and structural distortions within the crystal lattice have been quantitatively measured near the interface with a depth resolution of unit cell size.Since then, some discrepancies between the charge carrier densities and mobilities predicted by this model and those measured experimentally have been reported.

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We approach this by correlating the chemical and strain profiles of two heterostructures prepared in the same experimental conditions above and below the critical thickness of four unit cells for the insulator/metal transition.

A strong link between intermixing and structural distortions at such interfaces is highlighted: intermixing was more pronounced in the hetero-couple with conductive interface, whereas in-plane compressive strains extended deeper within the substrate of the hetero-couple with the insulating interface.

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